By spin-coating silver nanowires (AgNWs) and polymethyl methacrylate (PMMA), applying pressure imprint and plasma treatment, we obtained flat AgNW thin film with a sheet resistance of 20 Ω/sq and a transmittance of 78% at 550 nm with low surface roughness. No significant change in sheet resistance was observed after cyclic bending (bending radius is 5 mm) test and tape test. After 1 000 bending tests, the change rate of sheet resistance was only 8.3%. The organic light-emitting devices (OLEDs) were prepared by using such AgNW electrodes and a maximum brightness of 5 090 cd/mm² was obtained. Compared with the AgNWs electrode without any treatment, the present AgNW electrodes have lower sheet resistance and better hole injection. Our results show spin-coated with flat layers, embossed and plasma-treated AgNW electrodes are suitable for manufacturing flexible organic optoelectronic devices.

In this paper, co-doping method is used to improve the current efficiency of solution-processed organic light-emitting diodes (OLEDs). By changing the ratio of two thermally activated delayed fluorescent (TADF) emitters, we studied the performance of device and its mechanism. A solution processed OLED with a structure of indium tin oxide (ITO, 150 nm)/PEDOT:PSS (30 nm)/CBP:4CzIPN-x%:4CzPN-y% (30 nm)/TPBi (40 nm)/LiF (1 nm)/Al (100 nm) was fabricated. The current efficiencies of 26.6 cd/A and 26.4 cd/A were achieved by the devices with dopant ratio of 6% 4CzIPN:2% 4CzPN and 2% 4CzIPN:6% 4CzPN in emitting material layer (EML), respectively. By investigating the tendency of current density change in devices with different doping ratio, we suggested that the enhancement of the current efficiency should be due to the charge transport balance improvement induced by assist dopant in EML.

We fabricated phosphorescent organic light-emitting diodes (PhOLEDs) using thermally activated delayed fluorescence (TADF) material 10,10'-(4,4'-sulfonylbis(4,1-phenylene)) bis(9,9-dimethyl-9,10-dihydroacridine) (DMAC-DPS) with low concentration, which showed better performance compared with 1,3-bis(carbazole-9-yl) benzene (mCP) based devices. When the concentration of DMAC-DPS was 1wt%, the driving voltage of the device was only 3.3 V at 1 000 cd/m2, and the efficiency and lifetime of the device were effectively improved compared with those of mCP based devices. The result indicated that DMAC-DPS could?? effectively improve the performance of phosphorescent devices. We believe that the better device performance can be attributed to the optimization of the energy transfer process in the emitter layer and lifetime of triplet excitons by DMAC-DPS. The study may provide a simple and effective strategy to achieve high-performance OLEDs.

To achieve uniform distribution of silver nano clusters (SNCs) on substrate and reveal its effect on the performance of organic light-emitting diode (OLED), the SNCs incorporated OLED was fabricated and SNCs were coated by mul-ti-step spin coating. Compared with the device without SNCs film, the brightness and current efficiency of the OLED devices with SNCs film were highly raised. The enhancement is attributed to SNCs induced local surface plasmon (LSP) oscillation, which can increase the radiative rate of excitons on Alq3 molecules.

In this paper, p-chlorophenylacetic acid and p-fluorophenylacetic acid were applied to modify the indium tin oxide (ITO) electrodes. The surface work functions of unmodified ITO, p-chlorophenylacetic acid modified ITO (Cl-ITO) and p-fluorophenylacetic acid modified ITO (F-ITO) are 5.0 eV, 5.26 eV and 5.14 eV, respectively, and the water contact angles are 7.3°, 59.1° and 46.5°, respectively. The increase of the work function makes the hole injection ability of the devices im-proved, which is proved by the hole transport devices. The self-assembly (SAM) layers transfer hydrophilic ITO to hydro-phobic ITO, which makes ITO more compatible with the hydrophobic organic layers, making the organic film more stable during the operation. After modification, the organic light emitting diodes (OLEDs), SAM-modified ITO/NPB/Alq3/LiF/Al, with better performance and stability were fabricated. Especially, the OLED with Cl-ITO (Cl-OLED) has a maximum lumi-nance of 22 428 cd/m2 (improved by 32.9%) and a half-lifetime of 46 h. Our results suggest that employing organic acids to modify ITO surface can enhance the stability and the luminescent properties of OLED devices.

We fabricated organic light-emitting diodes (OLEDs) with the thermally activated delayed fluorescence (TADF) material of 4CzIPN, which show better stability compared with the 4,4’-Bis(carbazol-9-yl)biphenyl (CBP) based devices. The half lifetime of the device using 4CzIPN as host material has doubled, and a slower voltage rise compared with that of CBP-based devices has been achieved, which indicates the improvement of stability. We attribute the better stability to the good film morphology and difficult crystallization property of 4CzIPN. Our results suggest that employing the 4CzIPN as host material can be a promising way of fabricating OLEDs with longer operation lifetime.

采用非对称立体结构, 利用其表面在微米尺度范围上存在的表面曲率变化及其各向异性的梯度特征, 作用于喷墨打印在结构上方的TIPS-并五苯前驱体溶液表面, 形成不对称的液体表面张力分布, 从而驱动有机半导体发生取向生长。基于这种非对称立体结构制备了有机薄膜晶体管(OTFT)阵列, 其平均迁移率提升了近40%, 同时迁移率的变异系数由68%减小到39%。

对风云三号(FY-3)中分辨率光谱成像仪(MERSI)的黑体进行了在轨太阳污染模拟,以掌握在轨太阳污染对面源黑体的影响,同时研究了抑制太阳污染的措施.模拟了FY-3卫星轨道及全轨道周期内太阳光的入射角,使用Tracepro软件建立了太阳污染模拟的模型,利用太阳光入射与MERSI的相对位置对太阳污染进行仿真,分析了污染随光谱成像仪扫描镜旋转和卫星飞行位置的变化.最后,根据分析结果设计了太阳污染抑制措施,并对抑制效果进行了仿真验证.结果表明:在扫描镜附近区域设置遮光板,有效地抑制了太阳光的污染,使辐射量级小于0.1 W,整个太阳污染功率下降了97%以上,对黑体有良好的保护效果.另外,提出的方法提高了面源黑体温度的均匀性和稳定性,保证了红外通道星上定标精度.

采用旋涂法预先在SiO2衬底表面形成一层聚(4-乙烯基苯酚)(PVP)作为表面修饰层, 以喷墨打印的6,13-双(三异丙基甲硅烷基乙炔基)并五苯(TIPS并五苯)作为有源层制作有机薄膜晶体管, 有效改善了有机半导体薄膜的形貌。采用真空热蒸镀工艺制备源漏电极, 形成底栅顶接触结构的有机薄膜晶体管(OTFT)器件。作为对比, 在未经过表面修饰的SiO2衬底上采用相同条件打印TIPS并五苯薄膜晶体管, 发现在经过PVP修饰的SiO2衬底上打印的单点厚度更均匀, 咖啡环效应被抑制或被消除; 而通过多点交叠打印形成的矩形薄膜的晶粒尺寸更大, 相应的OTFT器件具有更高的场效应迁移率。在有PVP修饰层的衬底上制作的OTFT, 器件在饱和区的平均场效应迁移率达到了0.065 cm2·V-1·s-1; 而直接在SiO2衬底上制作的器件, 相应的平均场效应迁移率仅为0.02 cm2·V-1·s-1。

为了既可以高精度测量有突变的物体又能达到实时的目的，采用软件VC⁺⁺生成双频光栅的方法，用LCD投影机直接投射到物体表面，只需采集一幅图像经过傅里叶变换便可得到相位差，还原出物体形貌。实验结果表明，该方法简单方便、精度高，可以达到实时的要求，对基于双频光栅的傅里叶变换轮廓术的发展有很大的推动作用。